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Operating Conditions
Vin [V_DC]: Np: Ns: Vout [V_DC]: Iout [A_DC]:
fsw [kHz]: N1 [Q1 // FETs]: N2 [Q2 // FETs]:

Gate Driver Parameters
Vgdrive_Q1 [V]: Rg_Ext_Q1 [Ω]: Rpu_Q1 [Ω]: Rpd_Q1 [Ω]: Tdead [s]:
Vgdrive_Q2 [V]: Rg_Ext_Q2 [Ω]: Rpu_Q2 [Ω]: Rpd_Q2 [Ω]:

Diode Parameters
VF_D1 [V]: Qrr_D1 [C]: VF_D2 [V]: Qrr_D2 [C]:

Circuit Parameters
Lout [H]: DCRout [Ω]: Kh_Lout [Constant]: B_Lout [Tesla]: x_Lout [Exponent]:
Cin [F]: ESRin [Ω]: Cout [F]: ESRout [Ω]:

Transformer Parameters
Lp [H]: DCRp [Ω]: DCRs [Ω]: Kh [Constant]: B_TF [Tesla]:
x [Exponent]: A_core_TF [m²]: L_core_TF [m]: Ke [Constant]: t_core_TF [m]:

Thermal Parameters
TA [°C]: RthCA [°C/W]: TempCoeff [RDSon-TA Default]:

Calculated Parameters
Tsw [s]: D: Ls [H]: diLout [in %]: dVCout [in %]:
Pout [W]:


Select Your Power Devices
Use parametric data from datasheet tables        Add measurement data from datasheet graphs

Select Mosfet Part [Q1]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q2]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]


Converter Steady State Waveforms (assuming ideal switches)


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  • STEP-2
  • STEP-3
  • STEP-4



Loading.. ILav, IL Vs. Time
IL_RMS = 5.002 A


Loading.. VL, Vin, Vout Vs. Time


Loading.. Iin, ICin Vs. Time
Iin_RMS = 1.247 A
ICin_RMS = 0.104 A


Loading.. Vp, Vs Vs. Time


Loading.. Q1_Parameters Vs. Time
Q1_VDS_RMS = 143.695 V
Q1_IDS_RMS = 3.811 A


Loading.. Q2_Parameters Vs. Time
Q2_VDS_RMS = 138.757 V
Q2_IDS_RMS = 3.590 A


Loading.. VGS Vs. Time


Loading.. VDS Vs. Time
Q1_VDS_RMS = 143.695 V
Q2_VDS_RMS = 138.757 V


Loading.. IDS Vs. Time
Q1_IDS_RMS = 3.811 A
Q2_IDS_RMS = 3.590 A


Loading.. PowerLoss Vs. Time