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Opearting Conditions
Vin [V_DC]: Vout [V_DC]: Iout [A_DC]: fsw [kHz]: N [Q1 // FETs]:

Gate Driver Parameters
Vgdrive [V]: Rg_Ext [Ω]: Rpu [Ω]: Rpd [Ω]:

Diode Parameters
VF_D1 [V]: Qrr_D1 [C]:

Circuit Parameters
Lin [H]: DCRin [Ω]: Kh_Lin [Constant]: B_Lin [Tesla]: x_Lin [Exponent]:
Cin [F]: ESRin [Ω]: Cout [F]: ESRout [Ω]:

Thermal Parameters
TA [°C]: RthCA [°C/W]: TempCoeff [RDSon-TA Default]:

Calculated Parameters
Tsw [s]: D: diLin [in %]: dVCout [in %]: Pout [W]:


Select Your Power Devices
Use parametric data from datasheet tables        Add measurement data from datasheet graphs

Select Mosfet Part [Q1]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]


Converter Steady State Waveforms (assuming ideal switches)


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  • STEP-1
  • STEP-2



Loading.. ILav, IL=Iin Vs. Time
IL_RMS = 5.003 A


Loading.. VL, Vin, Vout Vs. Time


Loading.. ICin Vs. Time
ICin_RMS = 0.144 A


Loading.. Q1_Parameters Vs. Time
Q1_VDS_RMS = 17.501 V
Q1_IDS_RMS = 4.531 A


Loading.. PowerLoss Vs. Time