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Calculation: Dual Active Bridge Converter
Click here to try "Dual Active Bridge Converter" in the new UI (Beta)

Enter Operating Conditions
Vin [V_DC]: Np: Ns: Vout [V_DC]: Iout [A_DC]:
fsw [kHz]: N1 [Inverter // FETs]: N2 [Rectifier // FETs]:

Enter Gate Driver Parameters
Vgdrive_Inv [V]: Rg_Ext_Inv [Ω]: Rpu_Inv [Ω]: Rpd_Inv [Ω]: Tdead [s]:
Vgdrive_Rect [V]: Rg_Ext_Rect [Ω]: Rpu_Rect [Ω]: Rpd_Rect [Ω]:

Other Circuit Parameters
Lin [H]: DCRin [Ω]: Kh_Lin [Constant]: B_Lin [Tesla]: x_Lin [Exponent]:
Cin [F]: ESRin [Ω]: Cout [F]: ESRout [Ω]:

Enter Transformer Parameters
Lp [H]: DCRp [Ω]: DCRs [Ω]: Kh [Constant]: B_TF [Tesla]:
x [Exponent]: A_core_TF [m²]: L_core_TF [m]: Ke [Constant]: t_core_TF [m]:

Enter Thermal Parameters
TA [°C]: RthCA_Q1 [°C/W]: RthCA_Q2 [°C/W]: RthCA_Q3 [°C/W]: RthCA_Q4 [°C/W]:
RthCA_Q5 [°C/W]: RthCA_Q6 [°C/W]: RthCA_Q7 [°C/W]: RthCA_Q8 [°C/W]: TempCoeff [Rdson-TC Default]:

Calculated Parameters
Tsw [s]: Ph_Delay [in °]: Tdelay [s]: D: Ls [H]:
Iin [A]: diLin [in %]: dVCout [in %]: Pout [W]:


Select Your Power Devices
Use parametric data from datasheet tables        Add measurement data from datasheet graphs

Select Mosfet Part [Q1]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q2]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q3]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q4]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q5]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q6]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q7]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]

Select Mosfet Part [Q8]

Material Qualification
RDSON [Ohm] - Mounting
VDS [V] Package Area [mm2] -



   OR   

Note: Configuration, VDS [V], RDSon [mOhm] (Typ/Max), Vth_Max [V], Vgp_Typ [V]


Converter Steady State Waveforms (assuming ideal switches)


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Loading.. VAB, Vp, VCD = Vs Vs. Time


Loading.. VL, Vin, Vout Vs. Time


Loading.. IL, Ior, Iout Vs. Time
IL_RMS = 34.098 A
Ior_RMS = 68.196 A


Loading.. Iin, ICin Vs. Time
Iin_RMS = 33.681 A
ICin_RMS = 27.822 A


Loading.. Q1_Q2_Parameters Vs. Time
Q1_VDS_RMS = 703.768 V
Q1_IDS_RMS = 27.613 A


Loading.. Q3_Q4_Parameters Vs. Time
Q3_VDS_RMS = 704.724 V
Q3_IDS_RMS = 23.762 A


Loading.. Q5_Q6_Parameters Vs. Time
Q5_VDS_RMS = 249.862 V
Q5_IDS_RMS = 52.549 A


Loading.. Q7_Q8_Parameters Vs. Time
Q7_VDS_RMS = 309.482 V
Q7_IDS_RMS = 47.993 A


Loading.. VGS Vs. Time


Loading.. VDS Vs. Time
Q1_VDS_RMS = 703.768 V
Q2_VDS_RMS = 703.768 V
Q3_VDS_RMS = 704.724 V
Q4_VDS_RMS = 704.724 V
Q5_VDS_RMS = 249.862 V
Q6_VDS_RMS = 249.862 V
Q7_VDS_RMS = 309.482 V
Q8_VDS_RMS = 309.482 V


Loading.. IDS Vs. Time
Q1_IDS_RMS = 27.613 V
Q2_IDS_RMS = 27.613 V
Q3_IDS_RMS = 23.762 V
Q4_IDS_RMS = 23.762 V
Q5_IDS_RMS = 52.549 V
Q6_IDS_RMS = 52.549 V
Q7_IDS_RMS = 47.993 V
Q8_IDS_RMS = 47.993 V


Loading.. PowerLoss Vs. Time