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EPC Cross Reference


The objective of this cross-reference tool is to help you find the best GaN FETs to fit your design needs.
Data is for reference only, for design support contact us via GaN Talk Support Forum EPC


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Part Comparison Summary:
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Part Number NTMFS10N3D2C
(ON Semi)
EPC2204 X EPC2619 X EPC2059 X EPC2306 X EPC2307 X
Modify EPC Part
BVDSS [V] 100.0 100.0 100.0 170.0 100.0 200.0
RDS(ON) [mΩ] [Typ] 2.40 4.40 3.30 6.80 3.00 8.20
RTHJC [°K/W] 0.90 1.00 1.00 0.90 3.00 -
QG Typ [nC] 60.0 5.70 8.50 5.70 11.6 10.6
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.18 0.0086 0.013 0.0086 0.017 0.016
Package Area [mm2]
W=5.00mm, L=6.00mm
Area=30.0 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=1.40mm, L=2.80mm
Area=3.9 mm2
W=3.00mm, L=5.00mm
Area=15.0 mm2
W=3.00mm, L=5.00mm
Area=15.0 mm2
Calculated Total Power Loss [W]
8.51
2.71
2.35
3.95
2.51
4.87
Auto Qualified No No No No No No
Status Promotion Preferred Preferred Preferred Preferred Preferred
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Detail Power Loss Calculations:
Parameter Value Type NTMFS10N3D2C
(ON Semi)
EPC2204 EPC2619 EPC2059 EPC2306 EPC2307
Detail Parts Specifications
Click Here To See More Parameters >>
Package By Manufacturer PQFN-8::483af LGA 2.5 x 1.5 BARE DIE (2.5x1.5) LGA 2.8 x 1.4 QFN 3 x 5 QFN 3 x 5
Package Mounting SMD DIE DIE DIE SMD SMD
Material Silicon Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride
Configuration Single Single Single Single Single Single
Auto Qualified No No No No No No
VGS [V] Max -20.0, 20.0 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00 -, - -4.00, 6.00
BVDSS [V] Max 100 100 100 170 100 200
VTH [V] Min,Typ,Max 2.00, 3.20, 4.00 0.80, 1.10, 2.50 0.80, 1.10, 2.50 0.70, 1.00, 2.50 0.80, 1.30, 2.50 0.80, 1.10, 2.50
RDS(ON) [mΩ] Typ,Max 2.40, 3.20
AT VGS = 10V ID = 67A TJ = 25C
4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C
3.30, 4.20
AT VGS = 5V ID = 16A TJ = 25C
6.80, 9.00
AT VGS = 5V ID = 10A TJ = 25C
3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
8.20, 10.0
AT VGS = 5V ID = 16A TJ = 25C
RDS(ON) [mΩ] Typ,Max 3.80, 9.00
AT VGS = 6V ID = 33A TJ = 25C
4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C
3.30, 4.20
AT VGS = 5V ID = 16A TJ = 25C
6.80, 9.00
AT VGS = 5V ID = 10A TJ = 25C
3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
8.20, 10.0
AT VGS = 5V ID = 16A TJ = 25C
QG [nC] Typ,Max 38.0, 64.0
AT VGS = 6V ID = 67A
-, -
-, -
-, -
-, -
-, -
QG [nC] Typ,Max 60.0, 100.0
AT VGS = 10V ID = 67A
5.70, 7.40
AT VGS = 5V ID = 16A
8.50, 10.3
AT VGS = 5V ID = 16A
5.70, 7.40
AT VGS = 5V ID = 10A
11.6, 16.3
AT VGS = 5V ID = 25A
10.6, -
AT VGS = 5V ID = 16A
QGS [nC] Typ 20.0 1.80 2.20 1.30 4.10 -
QGD [nC] Typ 12.0 0.80 1.00 0.90 0.80 1.30
CISS [pF] Typ 4,439.0 644.0 1,180.0 633.0 1,667.0 1,401.0
COSS [pF] Typ 2,663.0 304.0 310.0 267.0 482.0 326.0
CRSS [pF] Typ 24.0 2.30 3.00 1.60 3.60 1.20
VSD [V] Typ,Max 0.70, 1.20 1.60, - 1.60, - 1.60, - 1.60, - 1.60, -
TRR [ns] Typ 44.0 0 0 0 0 0
QRR [nC] Typ 109.0 0 0 0 0 0
RG Internal [Ohm] Typ 0.80 0.40 0.40 0.50 0.40 -
RTHJC [°K/W] Max 0.90 1.00 1.00 0.90 3.00 -
RTHJA [°K/W] Max 45.0 64.0 66.0 63.0 54.0 -
ID [A] Typ 151.0
AT TC = 25C
29.0
29.0
AT TA = 25C
24.0
48.0
48.0
AT TA = 25C
ID [A] Typ 95.0
AT TC = 100C
-
-
-
-
-
ID [A] Typ 21.0
AT TA = 25C
-
-
-
-
-
ID(pulse) [A] Typ 775.0 125.0 164.0 102.0 197.0 130.0
PD [W] Typ 138.0
AT TC = 25C
-
-
-
-
-
PD [W] Typ 2.70
AT TA = 25C
-
-
-
-
-
Figure of Merit
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
RDS(ON)*QG [mΩ*nC] Typ,Max 144, 320 25, 44 28, 43 39, 67 35, 62 87, -
RDS(ON)*COSS [mΩ*pF] Typ,Max 6391, 14320 1338, 2736 1023, 1974 1816, 3609 1446, 2124 2673, -
Calculated Values For Current & Power Rating
ID [A] Calc. @RTHJA max (Datasheet) TJ=150°C, TA=25°C 20.8 12.8 15.0 10.5 17.5 -
ID [A] Calc. @ RTHCA=°C/W TJ=150°C, TA=25°C 57.5 41.7 49.8 34.3 45.3 35.4
ID [A] Calc. @RTHJC max (Datasheet) TJ=150°C, TC=25°C 147.3 102.1 122.0 87.8 74.0 -
PD [W] Calc. @RTHJA max TJ=150°C, TA=25°C 2.78 1.95 1.89 1.98 2.31 -
PD [W] Calc. @ System RTHJA=5°C/W, TJ=150°C, TA=25°C 21.2 20.8 20.8 21.2 15.6 25.0
PD [W] Calc. @RTHJC max TJ=150°C, TC=25°C 138.9 125.0 125.0 138.9 41.7 -
Calculated Switching Turn-On and Turn-Off Times
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
td(on) [ns] Typ
6.97
0.60
1.11
0.53
1.95
1.31
tr [ns] Typ
5.26
0.51
0.64
0.55
0.57
0.83
td(off) [ns] Typ
5.40
1.27
2.32
1.37
2.72
2.76
tf [ns] Typ
4.41
0.86
1.07
1.06
0.72
1.39
Calculated Power Loss
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.18 0.0086 0.013 0.0086 0.017 0.016
RDS(ON) [mΩ] at TJ Typ 4.3
@75.2°C
5
@41.3°C
3.5
@39.1°C
7.8
@48.3°C
3.4
@45.1°C
9
@49.3°C
Calculated Conduction Loss [W] Typ
1.80
2.08
1.47
3.29
1.44
3.79
Calculated Switching Loss [W] Max
3.90
0.51
0.76
0.55
0.87
0.94
Diode Reverse Recovery Power Loss [W] 1 Typ
1.635
Output Capacitor Power Loss [W] Typ
1.00
0.11
0.12
0.10
0.18
0.12
Calculated Total Power Loss [W] Typ
8.51
2.71
2.35
3.95
2.51
4.87
Estimated TJ at RTHCA=5°C/W [°C] Typ 71.5 43.9 40.8 51.2 46.2 51.3
Rated Junction Temperature [°C] Max 150.0 150.0 150.0 150.0 150.0 150.0

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual operating conditions.