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NTBLS1D5N10MC Datasheet

onsemi NTBLS1D5N10MC Silicon Mosfet Information & Datasheet.



Part Comparison Summary:
Part Number NTBLS1D5N10MC
Manufacturer onsemi EPC
Material Si GaN
Configuration Single Single
Auto Qualified No No
Package By Manufacturer H-PSOF8L 11.68x9.80-100CU BARE DIE 2.3X1.45 - 35
Package Mounting SMD DIE
Package Area [mm2]
W=9.80mm,L=11.68mm
Area=114.5 mm2
W=1.45mm,L=2.30mm
Area=3.3 mm2
BVDSS [V] 100.0 100.0
VGS [V] [Max] -20.0, 20.0 -4.00, 6.00
VTH [V] [Min,Typ,Max] 2.00, -, 4.00 0.80, 1.10, 2.50
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
QG [nC] [Typ] 131.0 7.30
RDS(ON) [mΩ] [Typ,Max] 1.20, 1.50
AT VGS = 10V ID = 80A TJ = 25C
3.80, 5.20
AT VGS = 5V ID = 16A TJ = 25C
QG [nC] [Typ,Max] 131.0, -
At VGS = 10V TA = 0C ID = 80A
7.30, 9.30
At VGS = 5V ID = 16A
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.39 0.011
Calculated Total Power Loss [W]
17.1
5.20
Status Promotion Preferred


VGS, VDS, IDS & Power Loss - Waveforms:
Circuit

Timestep: No of Cycles:



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss




Detail Parts Specifications And Power Loss Calculations:
Parameter Value Type NTBLS1D5N10MC EPC2090
Dynamic Electrical Characteristics
QG [nC] Typ,Max 131.0, -
AT VGS = 10V ID = 80A
7.30, 9.30
AT VGS = 5V ID = 16A
QGS [nC] Typ 49.0 2.80
QGD [nC] Typ 21.0 0.70
CISS [pF] Typ 10,100.0 1,046.0
COSS [pF] Typ 5,100.0 2.90
CRSS [pF] Typ 84.0 364.0
VSD [V] Typ,Max 0.81, - 1.50, -
TRR [ns] Typ 110.0 0
QRR [nC] Typ 143.0 0
RG Internal [Ohm] Typ - 0.40
RG External [Ohm] Typ 2.00 1.60

Current & Power Ratings:
Parameter Value Type NTBLS1D5N10MC EPC2090
RTHJC [°K/W] Max 0.46 2.90
RTHJA [°K/W] Max 43.0 -
ID [A] Typ 312.0
AT TC = 25C
46.0
ID [A] Typ 220.0
AT TC = 100C
-
ID [A] Typ 32.0
-
ID [A] Typ 22.0
-
ID(pulse) [A] Typ 2,055.0 125.0
ID Calculator
@ RTHCA=°C/W , TJMax=°C , TA=°C
Max 87.4 39.0
PD [W] Typ 322.0
AT TC = 25C
-
PD [W] Typ 161.0
AT TC = 100C
-
PD [W] Typ 3.40
-
PD [W] Typ 1.70
-
PD Calculator
@ RTHCA=5°C/W, TJMax=150°C, TA=25°C
Max 22.9 15.8

Detailed Power Loss Calculation:
Parameter Value Type NTBLS1D5N10MC EPC2090
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Switching Turn-On and Turn-Off Times
td(on) [ns] Typ
14.4
0.98
tr [ns] Typ
8.57
0.45
td(off) [ns] Typ
13.6
2.06
tf [ns] Typ
8.24
0.75
Calculated Power Loss
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.39 0.011
RDS(ON) [mΩ] at TJ Typ 1.9
@114.1°C
4.9
@68.1°C
Calculated Conduction Loss [W] Typ
1.69
4.32
Calculated Switching Loss [W] Max
10.9
0.87
Diode Reverse Recovery Power Loss [W] 1 Typ
2.145
Output Capacitor Power Loss [W] Typ
1.91
0.0011
Calculated Total Power Loss [W] Typ
17.1
5.20
Estimated TJ at RTHCA=5°C/W [°C] Typ 114.1 68.1
Rated Junction Temperature [°C] Max 175.0 150.0

Digikey Inventory & Price:

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual
operating conditions.



Power Loss Breakdown Chart: