Datasheet
| Part Comparison Summary: | |||||||||
| Part Number | NTBLS1D5N10MC | ||||||||
| Manufacturer | onsemi | EPC | |||||||
| Material | Si | GaN | |||||||
| Configuration | Single | Single | |||||||
| Auto Qualified | No | No | |||||||
| Package By Manufacturer | H-PSOF8L 11.68x9.80-100CU | LGA 2.5 x 1.5 | |||||||
| Package Mounting | SMD | DIE | |||||||
| Package Area [mm2] |
W=9.80mm,L=11.68mm
Area=114.5 mm2 |
W=1.50mm,L=2.50mm
Area=3.8 mm2 |
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| BVDSS [V] | 100.0 | 100.0 | |||||||
| VGS [V] [Max] | -20.0, 20.0 | -4.00, 6.00 | |||||||
| VTH [V] [Min,Typ,Max] | 2.00, -, 4.00 | 0.80, 1.10, 2.50 | |||||||
| FET Operating Conditions |
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| RDS(ON) [mΩ] [Typ,Max] |
1.20, 1.50 AT VGS = 10V ID = 80A TJ = 25C |
3.30, 4.20 AT VGS = 5V ID = 16A TJ = 25C |
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| QG [nC] [Typ,Max] | 131.0, - At VGS = 10V TA = 0C ID = 80A |
8.50, 10.3 At VGS = 5V ID = 16A |
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| Gate Drive [V] | 10.0 | 5.00 | |||||||
| Gate Drive Loss [W] | 0.39 | 0.013 | |||||||
| Calculated Total Power Loss [W] | 17.1 |
4.45 |
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| Status | Promotion | Preferred | |||||||
VGS, VDS, IDS & Power Loss - Waveforms: Circuit |
| Detail Parts Specifications And Power Loss Calculations: | |||||||||
| Parameter | Value Type | NTBLS1D5N10MC | EPC2619 | ||||||
| Dynamic Electrical Characteristics | |||||||||
| QG [nC] | Typ,Max | 131.0, - AT VGS = 10V ID = 80A |
8.50, 10.3 AT VGS = 5V ID = 16A |
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| QGS [nC] | Typ | 49.0 | 2.20 | ||||||
| QGD [nC] | Typ | 21.0 | 1.00 | ||||||
| CISS [pF] | Typ | 10,100.0 | 1,180.0 | ||||||
| COSS [pF] | Typ | 5,100.0 | 310.0 | ||||||
| CRSS [pF] | Typ | 84.0 | 3.00 | ||||||
| VSD [V] | Typ,Max | 0.81, - | 1.60, - | ||||||
| TRR [ns] | Typ | 110.0 | 0 | ||||||
| QRR [nC] | Typ | 143.0 | 0 | ||||||
| RG Internal [Ohm] | Typ | - | 0.40 | ||||||
| RG External [Ohm] | Typ | 2.00 | 1.60 | ||||||
| Current & Power Ratings: | |||||||||
| Parameter | Value Type | NTBLS1D5N10MC | EPC2619 | ||||||
| RTHJC [°K/W] | Max | 0.46 | 1.00 | ||||||
| RTHJA [°K/W] | Max | 43.0 | 66.0 | ||||||
| ID [A] | Typ |
312.0 AT TC = 25C |
29.0 AT TA = 25C |
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| ID [A] | Typ |
220.0 AT TC = 100C |
- |
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| ID [A] | Typ |
32.0 |
- |
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| ID [A] | Typ |
22.0 |
- |
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| ID(pulse) [A] | Typ | 2,055.0 | 164.0 | ||||||
| ID Calculator @ RTHCA=°C/W , TJMax=°C , TA=°C |
Max | 87.4 | 49.8 | ||||||
| PD [W] | Typ |
322.0 AT TC = 25C |
- |
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| PD [W] | Typ |
161.0 AT TC = 100C |
- |
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| PD [W] | Typ |
3.40 |
- |
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| PD [W] | Typ |
1.70 |
- |
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| PD Calculator @ RTHCA=5°C/W, TJMax=150°C, TA=25°C |
Max | 22.9 | 20.8 | ||||||
| Detailed Power Loss Calculation: | |||||||||||
| Parameter | Value Type | NTBLS1D5N10MC | EPC2619 | ||||||||
| FET Operating Conditions |
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| Calculated Switching Turn-On and Turn-Off Times | |||||||||||
| td(on) [ns] | Typ | 14.4 |
1.11 |
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| tr [ns] | Typ | 8.57 |
0.64 |
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| td(off) [ns] | Typ | 13.6 |
2.32 |
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| tf [ns] | Typ | 8.24 |
1.07 |
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| Calculated Power Loss | |||||||||||
| Gate Drive [V] | 10.0 | 5.00 | |||||||||
| Gate Drive Loss [W] | 0.39 | 0.013 | |||||||||
| RDS(ON) [mΩ] at TJ | Typ | 1.9 @114.1°C |
3.7 @54.5°C |
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| Calculated Conduction Loss [W] | Typ | 1.69 |
3.23 |
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| Calculated Switching Loss [W] | Max | 10.9 |
1.10 |
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| Diode Reverse Recovery Power Loss [W] 1 | Typ | 2.145 |
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| Output Capacitor Power Loss [W] | Typ | 1.91 |
0.12 |
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| Calculated Total Power Loss [W] | Typ | 17.1 |
4.45 |
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| Estimated TJ at RTHCA=5°C/W [°C] | Typ | 114.1 | 54.5 | ||||||||
| Rated Junction Temperature [°C] | Max | 175.0 | 150.0 | ||||||||
| Digikey Inventory & Price: |
| Power Loss Breakdown Chart: |
