Part Comparison Summary: | |||||||||
Part Number | DMT10H015LFG | ||||||||
Manufacturer | Diodes | EPC | |||||||
Material | Si | GaN | |||||||
Configuration | Single | Single | |||||||
Auto Qualified | Yes | No | |||||||
Package By Manufacturer | PowerDI3333-8 | LGA 1.7 x 1.1 | |||||||
Package Mounting | SMD | DIE | |||||||
Package Area [mm2] |
W=3.3mm,L=3.3mm
Area=10.9 mm2 |
W=1.09mm,L=1.70mm
Area=1.9 mm2 |
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BVDSS [V] | 100.0 | 100.0 | |||||||
VGS [V] [Max] | -20.0, 20.0 | -4.00, 6.00 | |||||||
VTH [V] [Min,Typ,Max] | 1.40, 2.00, 3.50 | 0.80, 1.40, 2.50 | |||||||
FET Operating Conditions |
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RDS(ON) [mΩ] [Typ,Max] |
17.9, 23.5 AT VGS = 4.5V ID = 20A TJ = 25C |
24.0, 30.0 AT VGS = 5V ID = 6A TJ = 25C |
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RDS(ON) [mΩ] [Typ,Max] |
13.3, 18.0 AT VGS = 6V ID = 20A TJ = 25C |
24.0, 30.0 AT VGS = 5V ID = 6A TJ = 25C |
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RDS(ON) [mΩ] [Typ,Max] |
10.8, 13.5 AT VGS = 10V ID = 20A TJ = 25C |
24.0, 30.0 AT VGS = 5V ID = 6A TJ = 25C |
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QG [nC] [Typ,Max] | 33.3, - At VGS = 10V ID = 10A |
1.60, 2.20 At VGS = 5V ID = 6A |
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Gate Drive [V] | 10.0 | 5.00 | |||||||
Gate Drive Loss [W] | 0.100 | 0.0024 | |||||||
Calculated Total Power Loss [W] | 2.31 |
1.61 |
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Status | Promotion | New Device Offered (NDO)The GaN Experts recommend EPC2051 |
VGS, VDS, IDS & Power Loss - Waveforms: Circuit |
Detail Parts Specifications And Power Loss Calculations: | |||||||||
Parameter | Value Type | DMT10H015LFG | EPC2007C | ||||||
Dynamic Electrical Characteristics | |||||||||
QG [nC] | Typ,Max | 33.3, - AT VGS = 10V ID = 10A |
1.60, 2.20 AT VGS = 5V ID = 6A |
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QGS [nC] | Typ | 6.90 | 0.60 | ||||||
QGD [nC] | Typ | 5.10 | 0.30 | ||||||
CISS [pF] | Typ | 1,871.0 | 170.0 | ||||||
COSS [pF] | Typ | 261.0 | 110.0 | ||||||
CRSS [pF] | Typ | 6.90 | 1.90 | ||||||
VSD [V] | Typ,Max | 0.90, 1.30 | 2.10, - | ||||||
TRR [ns] | Typ | 37.9 | 0 | ||||||
QRR [nC] | Typ | 51.9 | 0 | ||||||
RG Internal [Ohm] | Typ | 0.75 | 0.40 | ||||||
RG External [Ohm] | Typ | 1.25 | 1.60 |
Current & Power Ratings: | |||||||||
Parameter | Value Type | DMT10H015LFG | EPC2007C | ||||||
RTHJC [°K/W] | Max | 3.50 | 3.60 | ||||||
RTHJA [°K/W] | Max | 61.0 | 80.0 | ||||||
ID [A] | Typ |
10.0 AT VGS = 10V TA = 25C |
6.00 |
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ID [A] | Typ |
8.00 AT VGS = 10V TA = 70C |
- |
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ID [A] | Typ |
42.0 AT VGS = 10V TA = 25C |
- |
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ID [A] | Typ |
26.0 AT VGS = 10V TC = 100C |
- |
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ID(pulse) [A] | Typ | 75.0 | 40.0 | ||||||
ID Calculator @ RTHCA=°C/W , TJMax=°C , TA=°C |
Max | 23.3 | 15.6 | ||||||
PD [W] | Typ |
35.0 AT TC = 25C |
- |
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PD [W] | Typ |
2.00 AT TA = 25C |
- |
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PD Calculator @ RTHCA=5°C/W, TJMax=150°C, TA=25°C |
Max | 14.7 | 14.5 |
Detailed Power Loss Calculation: | |||||||||||
Parameter | Value Type | DMT10H015LFG | EPC2007C | ||||||||
FET Operating Conditions |
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Calculated Switching Turn-On and Turn-Off Times | |||||||||||
td(on) [ns] | Typ | 1.55 |
0.22 |
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tr [ns] | Typ | 1.55 |
0.23 |
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td(off) [ns] | Typ | 4.04 |
0.25 |
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tf [ns] | Typ | 3.00 |
0.25 |
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Calculated Power Loss | |||||||||||
Gate Drive [V] | 10.0 | 5.00 | |||||||||
Gate Drive Loss [W] | 0.100 | 0.0024 | |||||||||
RDS(ON) [mΩ] at TJ | Typ | 12 @44.5°C |
25 @41.5°C |
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Calculated Conduction Loss [W] | Typ | 0.74 |
1.51 |
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Calculated Switching Loss [W] | Max | 0.60 |
0.063 |
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Diode Reverse Recovery Power Loss [W] 1 | Typ | 0.7785 |
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Output Capacitor Power Loss [W] | Typ | 0.098 |
0.041 |
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Calculated Total Power Loss [W] | Typ | 2.31 |
1.61 |
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Estimated TJ at RTHCA=5°C/W [°C] | Typ | 44.5 | 41.5 | ||||||||
Rated Junction Temperature [°C] | Max | 150.0 | 150.0 |
Digikey Inventory & Price: |
Power Loss Breakdown Chart: |