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DMT10H015LFG Datasheet

Diodes DMT10H015LFG Silicon Mosfet Information & Datasheet.



Part Comparison Summary:
Part Number DMT10H015LFG
Manufacturer Diodes EPC
Material Si GaN
Configuration Single Single
Auto Qualified Yes No
Package By Manufacturer PowerDI3333-8 LGA 1.7 x 1.1
Package Mounting SMD DIE
Package Area [mm2]
W=3.3mm,L=3.3mm
Area=10.9 mm2
W=1.09mm,L=1.70mm
Area=1.9 mm2
BVDSS [V] 100.0 100.0
VGS [V] [Max] -20.0, 20.0 -4.00, 6.00
VTH [V] [Min,Typ,Max] 1.40, 2.00, 3.50 0.80, 1.40, 2.50
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
QG [nC] [Typ] 33.3 1.60
RDS(ON) [mΩ] [Typ,Max] 17.9, 23.5
AT VGS = 4.5V ID = 20A TJ = 25C
24.0, 30.0
AT VGS = 5V ID = 6A TJ = 25C
RDS(ON) [mΩ] [Typ,Max] 13.3, 18.0
AT VGS = 6V ID = 20A TJ = 25C
24.0, 30.0
AT VGS = 5V ID = 6A TJ = 25C
RDS(ON) [mΩ] [Typ,Max] 10.8, 13.5
AT VGS = 10V ID = 20A TJ = 25C
24.0, 30.0
AT VGS = 5V ID = 6A TJ = 25C
QG [nC] [Typ,Max] 33.3, -
At VGS = 10V ID = 10A
1.60, 2.20
At VGS = 5V ID = 6A
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.100 0.0024
Calculated Total Power Loss [W]
2.31
1.61
Status Promotion New Device Offered (NDO)The GaN Experts recommend EPC2051


VGS, VDS, IDS & Power Loss - Waveforms:
Circuit

Timestep: No of Cycles:



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss




Detail Parts Specifications And Power Loss Calculations:
Parameter Value Type DMT10H015LFG EPC2007C
Dynamic Electrical Characteristics
QG [nC] Typ,Max 33.3, -
AT VGS = 10V ID = 10A
1.60, 2.20
AT VGS = 5V ID = 6A
QGS [nC] Typ 6.90 0.60
QGD [nC] Typ 5.10 0.30
CISS [pF] Typ 1,871.0 170.0
COSS [pF] Typ 261.0 110.0
CRSS [pF] Typ 6.90 1.90
VSD [V] Typ,Max 0.90, 1.30 2.10, -
TRR [ns] Typ 37.9 0
QRR [nC] Typ 51.9 0
RG Internal [Ohm] Typ 0.75 0.40
RG External [Ohm] Typ 1.25 1.60

Current & Power Ratings:
Parameter Value Type DMT10H015LFG EPC2007C
RTHJC [°K/W] Max 3.50 3.60
RTHJA [°K/W] Max 61.0 80.0
ID [A] Typ 10.0
AT VGS = 10V TA = 25C
6.00
ID [A] Typ 8.00
AT VGS = 10V TA = 70C
-
ID [A] Typ 42.0
AT VGS = 10V TA = 25C
-
ID [A] Typ 26.0
AT VGS = 10V TC = 100C
-
ID(pulse) [A] Typ 75.0 40.0
ID Calculator
@ RTHCA=°C/W , TJMax=°C , TA=°C
Max 23.3 15.6
PD [W] Typ 35.0
AT TC = 25C
-
PD [W] Typ 2.00
AT TA = 25C
-
PD Calculator
@ RTHCA=5°C/W, TJMax=150°C, TA=25°C
Max 14.7 14.5

Detailed Power Loss Calculation:
Parameter Value Type DMT10H015LFG EPC2007C
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Switching Turn-On and Turn-Off Times
td(on) [ns] Typ
1.55
0.22
tr [ns] Typ
1.55
0.23
td(off) [ns] Typ
4.04
0.25
tf [ns] Typ
3.00
0.25
Calculated Power Loss
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.100 0.0024
RDS(ON) [mΩ] at TJ Typ 12
@44.5°C
25
@41.5°C
Calculated Conduction Loss [W] Typ
0.74
1.51
Calculated Switching Loss [W] Max
0.60
0.063
Diode Reverse Recovery Power Loss [W] 1 Typ
0.7785
Output Capacitor Power Loss [W] Typ
0.098
0.041
Calculated Total Power Loss [W] Typ
2.31
1.61
Estimated TJ at RTHCA=5°C/W [°C] Typ 44.5 41.5
Rated Junction Temperature [°C] Max 150.0 150.0

Digikey Inventory & Price:

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual
operating conditions.



Power Loss Breakdown Chart: