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CSD19538Q2 Datasheet

TI CSD19538Q2 Silicon Mosfet Information & Datasheet.



Part Comparison Summary:
Part Number CSD19538Q2
Manufacturer TI EPC
Material Si GaN
Configuration Single Single Bi-Directional
Auto Qualified No No
Package By Manufacturer SON2x2 BGA 0.9 x 0.9
Package Mounting SMD DIE
Package Area [mm2]
W=2mm,L=2mm
Area=4.0 mm2
W=0.90mm,L=0.90mm
Area=0.8 mm2
BVDSS [V] 100.0 100.0
VGS [V] [Max] -20.0, 20.0 -4.00, 6.00
VTH [V] [Min,Typ,Max] 2.80, 3.20, 3.80 0.80, 1.20, 2.50
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
QG [nC] [Typ] 4.30 1.10
RDS(ON) [mΩ] [Typ,Max] 49.0, 59.0
AT VGS = 10V ID = 5A TJ = 25C
50.0, 78.0
AT VGS = 5V ID = 1A TJ = 25C
RDS(ON) [mΩ] [Typ,Max] 58.0, 72.0
AT VGS = 6V ID = 5A TJ = 25C
50.0, 78.0
AT VGS = 5V ID = 1A TJ = 25C
QG [nC] [Typ,Max] 4.30, 5.60
At ID = 5A
1.10, 1.60
At VGS = 5V ID = 1A
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.017 0.0017
Calculated Total Power Loss [W]
2.21
0.71
Status Promotion Preferred


VGS, VDS, IDS & Power Loss - Waveforms:
Circuit

Timestep: No of Cycles:



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss




Detail Parts Specifications And Power Loss Calculations:
Parameter Value Type CSD19538Q2 EPC2121
Dynamic Electrical Characteristics
QG [nC] Typ,Max 4.30, 5.60
AT ID = 5A
1.10, 1.60
AT VGS = 5V ID = 1A
QGS [nC] Typ 1.60 0.28
QGD [nC] Typ 0.80 0.16
CISS [pF] Typ 349.0 137.0
COSS [pF] Typ 69.0 54.0
CRSS [pF] Typ 12.6 1.00
VSD [V] Typ,Max 0.85, 1.00 -, -
TRR [ns] Typ 32.0 0
QRR [nC] Typ 94.0 0
RG Internal [Ohm] Typ 4.60 5.90
RG External [Ohm] Typ -2.60
RgTotal < Rg Internal
-3.90
RgTotal < Rg Internal

Current & Power Ratings:
Parameter Value Type CSD19538Q2 EPC2121
RTHJC [°K/W] Max 6.20 4.80
RTHJA [°K/W] Max 65.0 100.0
ID [A] Typ 4.60
2.50
AT TA = 25C
ID [A] Typ 13.1
AT TC = 25C
-
ID [A] Typ 14.4
-
ID(pulse) [A] Typ 34.4 18.0
ID Calculator
@ RTHCA=°C/W , TJMax=°C , TA=°C
Max 9.73 9.04
PD [W] Typ 20.2
AT TC = 25C
-
PD [W] Typ 2.50
-
PD Calculator
@ RTHCA=5°C/W, TJMax=150°C, TA=25°C
Max 11.2 12.8

Detailed Power Loss Calculation:
Parameter Value Type CSD19538Q2 EPC2121
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Switching Turn-On and Turn-Off Times
td(on) [ns] Typ
0.55
0.14
tr [ns] Typ
0.35
0.11
td(off) [ns] Typ
0.42
0.25
tf [ns] Typ
0.29
0.16
Calculated Power Loss
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.017 0.0017
RDS(ON) [mΩ] at TJ Typ 57
@49.9°C
53
@34.9°C
Calculated Conduction Loss [W] Typ
0.71
0.67
Calculated Switching Loss [W] Max
0.049
0.018
Diode Reverse Recovery Power Loss [W] 1 Typ
1.41
Output Capacitor Power Loss [W] Typ
0.026
0.020
Calculated Total Power Loss [W] Typ
2.21
0.71
Estimated TJ at RTHCA=5°C/W [°C] Typ 49.9 34.9
Rated Junction Temperature [°C] Max 150.0 150.0

Digikey Inventory & Price:

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual
operating conditions.



Power Loss Breakdown Chart: