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BSC027N10NS5 Datasheet

Infineon BSC027N10NS5 Silicon Mosfet Information & Datasheet.



Part Comparison Summary:
Part Number BSC027N10NS5
Manufacturer Infineon EPC
Material Si GaN
Configuration Single Single
Auto Qualified No Yes
Package By Manufacturer PG-TSON-8 LGA 2.1 x 1.6
Package Mounting SMD DIE
Package Area [mm2]
W=5mm,L=6mm
Area=30.0 mm2
W=1.63mm,L=2.11mm
Area=3.4 mm2
BVDSS [V] 100.0 100.0
VGS [V] [Max] -20.0, 20.0 -4.00, 6.00
VTH [V] [Min,Typ,Max] 2.20, 3.00, 3.80 0.70, 1.00, 2.50
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
QG [nC] [Typ] 89.0 3.20
RDS(ON) [mΩ] [Typ,Max] 2.10, 2.70
AT VGS = 10V ID = 50A TJ = 25C
10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C
RDS(ON) [mΩ] [Typ,Max] 2.60, 3.40
AT VGS = 6V ID = 25A TJ = 25C
10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C
QG [nC] [Typ,Max] 89.0, 111.0
At VGS = 10V ID = 50A
3.20, 4.00
At VGS = 5V ID = 11A
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.27 0.0048
Calculated Total Power Loss [W]
9.27
6.84
Status Non-Promotion New Device Offered (NDO)The GaN Experts recommend EPC2252


VGS, VDS, IDS & Power Loss - Waveforms:
Circuit

Timestep: No of Cycles:



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss




Detail Parts Specifications And Power Loss Calculations:
Parameter Value Type BSC027N10NS5 EPC2212
Dynamic Electrical Characteristics
QG [nC] Typ,Max 89.0, 111.0
AT VGS = 10V ID = 50A
3.20, 4.00
AT VGS = 5V ID = 11A
QGS [nC] Typ 28.0 0.90
QGD [nC] Typ 18.0 0.60
CISS [pF] Typ 6,300.0 339.0
COSS [pF] Typ 970.0 238.0
CRSS [pF] Typ 43.0 3.00
VSD [V] Typ,Max 0.83, 1.10 1.50, -
TRR [ns] Typ 56.0 0
QRR [nC] Typ 89.0 0
RG Internal [Ohm] Typ 1.70 0.40
RG External [Ohm] Typ 0.30 1.60

Current & Power Ratings:
Parameter Value Type BSC027N10NS5 EPC2212
RTHJC [°K/W] Max 0.70 2.00
RTHJA [°K/W] Max 50.0 69.0
ID [A] Typ 100.0
AT VGS = 10V TC = 25C
18.0
ID [A] Typ 23.0
AT VGS = 10V TA = 25C
-
ID(pulse) [A] Typ 400.0 75.0
ID Calculator
@ RTHCA=°C/W , TJMax=°C , TA=°C
Max 63.7 25.7
PD [W] Typ 214.0
AT TC = 25C
-
PD [W] Typ 3.00
AT TA = 25C
-
PD Calculator
@ RTHCA=5°C/W, TJMax=150°C, TA=25°C
Max 21.9 17.9

Detailed Power Loss Calculation:
Parameter Value Type BSC027N10NS5 EPC2212
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Switching Turn-On and Turn-Off Times
td(on) [ns] Typ
8.99
0.28
tr [ns] Typ
7.35
0.36
td(off) [ns] Typ
8.48
0.73
tf [ns] Typ
7.06
0.71
Calculated Power Loss
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.27 0.0048
RDS(ON) [mΩ] at TJ Typ 2.8
@76.0°C
13
@73.6°C
Calculated Conduction Loss [W] Typ
1.35
6.39
Calculated Switching Loss [W] Max
5.95
0.36
Diode Reverse Recovery Power Loss [W] 1 Typ
1.335
Output Capacitor Power Loss [W] Typ
0.36
0.089
Calculated Total Power Loss [W] Typ
9.27
6.84
Estimated TJ at RTHCA=5°C/W [°C] Typ 76.0 73.6
Rated Junction Temperature [°C] Max 175.0 150.0

Digikey Inventory & Price:

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual
operating conditions.



Power Loss Breakdown Chart: