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AONR66922 Datasheet

AOS AONR66922 Silicon Mosfet Information & Datasheet.



Part Comparison Summary:
Part Number AONR66922
Manufacturer AOS EPC
Material Si GaN
Configuration Single Single
Auto Qualified No No
Package By Manufacturer DFN3.3x3.3-8L BGA 1.5x1.5
Package Mounting SMD DIE
Package Area [mm2]
W=3.3mm,L=3.3mm
Area=10.9 mm2
W=1.50mm,L=1.50mm
Area=2.3 mm2
BVDSS [V] 100.0 100.0
VGS [V] [Max] -20.0, 20.0 -4.00, 6.00
VTH [V] [Min,Typ,Max] 1.50, 2.00, 2.50 0.80, 1.40, 2.50
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
QG [nC] [Typ] 32.5 3.50
RDS(ON) [mΩ] [Typ,Max] 7.40, 9.00
AT VGS = 10V ID = 15A TJ = 25C
10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C
RDS(ON) [mΩ] [Typ,Max] 9.40, 12.0
AT VGS = 4.5V ID = 13A TJ = 25C
10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C
QG [nC] [Typ,Max] 32.5, 46.0
At VGS = 10V ID = 15A
3.50, 4.50
At VGS = 5V ID = 11A
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.098 0.0053
Calculated Total Power Loss [W]
4.67
1.48
Status Promotion Preferred


VGS, VDS, IDS & Power Loss - Waveforms:
Circuit

Timestep: No of Cycles:



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss



Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss


Loading.. Time Vs. VGS, VDS, IDS & PowerLoss




Detail Parts Specifications And Power Loss Calculations:
Parameter Value Type AONR66922 EPC2052
Dynamic Electrical Characteristics
QG [nC] Typ,Max 15.0, -
AT VGS = 4.5V ID = 15A
-, -
QG [nC] Typ,Max 32.5, 46.0
AT VGS = 10V ID = 15A
3.50, 4.50
AT VGS = 5V ID = 11A
QGS [nC] Typ 7.00 1.50
QGD [nC] Typ 5.00 0.50
CISS [pF] Typ 2,180.0 441.0
COSS [pF] Typ 550.0 195.0
CRSS [pF] Typ 13.0 3.20
VSD [V] Typ,Max 0.72, 1.00 2.00, -
TRR [ns] Typ 32.0 0
QRR [nC] Typ 138.0 0
RG Internal [Ohm] Typ 1.10 0.70
RG External [Ohm] Typ 0.90 1.30

Current & Power Ratings:
Parameter Value Type AONR66922 EPC2052
RTHJC [°K/W] Max 2.40 2.00
RTHJA [°K/W] Max 60.0 74.0
ID [A] Typ 50.0
AT TC = 25C
8.20
ID [A] Typ 34.0
AT TC = 100C
-
ID [A] Typ 15.0
AT TA = 25C
-
ID [A] Typ 12.0
AT TA = 70C
-
ID(pulse) [A] Typ 150.0 74.0
ID Calculator
@ RTHCA=°C/W , TJMax=°C , TA=°C
Max 30.6 25.7
PD [W] Typ 52.0
AT TC = 25C
-
PD [W] Typ 20.5
AT TC = 100C
-
PD Calculator
@ RTHCA=5°C/W, TJMax=150°C, TA=25°C
Max 16.9 17.9

Detailed Power Loss Calculation:
Parameter Value Type AONR66922 EPC2052
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Switching Turn-On and Turn-Off Times
td(on) [ns] Typ
1.81
0.57
tr [ns] Typ
1.52
0.38
td(off) [ns] Typ
4.70
0.65
tf [ns] Typ
2.94
0.42
Calculated Power Loss
Gate Drive [V] 10.0 5.00
Gate Drive Loss [W] 0.098 0.0053
RDS(ON) [mΩ] at TJ Typ 13
@55.7°C
11
@37.4°C
Calculated Conduction Loss [W] Typ
1.44
1.22
Calculated Switching Loss [W] Max
0.86
0.17
Diode Reverse Recovery Power Loss [W] 1 Typ
2.07
Output Capacitor Power Loss [W] Typ
0.21
0.073
Calculated Total Power Loss [W] Typ
4.67
1.48
Estimated TJ at RTHCA=5°C/W [°C] Typ 55.7 37.4
Rated Junction Temperature [°C] Max 150.0 150.0

Digikey Inventory & Price:

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual
operating conditions.



Power Loss Breakdown Chart: