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EPC Cross Reference


The objective of this cross-reference tool is to help you find the best GaN FETs to fit your design needs.
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Part Comparison Summary:
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Part Number PSMN1R0-40YSH
(Nexperia)
EPC2055 X EPC2204 X EPC2204A X EPC2065 X EPC2619 X
Modify EPC Part
BVDSS [V] 40.0 40.0 100.0 80.0 80.0 100.0
RDS(ON) [mΩ] [Typ] 1.69 3.00 4.40 4.40 2.70 3.30
RTHJC [°K/W] 0.45 1.00 1.00 1.00 0.50 1.00
QG Typ [nC] 42.0 6.60 5.70 5.70 9.40 8.50
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.42 0.033 0.029 0.029 0.047 0.043
Package Area [mm2]
W=5.13mm, L=6.05mm
Area=31.0 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=1.95mm, L=3.5mm
Area=6.8 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
Calculated Total Power Loss [W]
9.66
3.01
4.10
4.03
3.66
3.52
Auto Qualified No No No Yes No No
Status Promotion Preferred Preferred Preferred Preferred Preferred
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Detail Power Loss Calculations:
Parameter Value Type PSMN1R0-40YSH
(Nexperia)
EPC2055 EPC2204 EPC2204A EPC2065 EPC2619
Detail Parts Specifications
Click Here To See More Parameters >>
Package By Manufacturer SOT1023 LGA 2.5 x 1.5 LGA 2.5 x 1.5 BARE DIE (2.5x1.5) LGA 3.5 x 1.95 BARE DIE (2.5x1.5)
Package Mounting SMD DIE DIE DIE DIE DIE
Material Silicon Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride
Configuration Single Single Single Single Single Single
Auto Qualified No No No Yes No No
VGS [V] Max -20.0, 20.0 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00
BVDSS [V] Max 40 40 100 80 80 100
VTH [V] Min,Typ,Max 2.40, 3.00, 3.60 0.70, 1.10, 2.50 0.80, 1.10, 2.50 0.70, 1.10, 2.50 0.70, 1.20, 2.50 0.80, 1.10, 2.50
RDS(ON) [mΩ] Typ,Max -, -
3.00, 3.60
AT VGS = 5V ID = 15A TJ = 25C
4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C
4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C
2.70, 3.60
AT VGS = 5V ID = 25A TJ = 25C
3.30, 4.20
AT VGS = 5V ID = 16A TJ = 25C
QG [nC] Typ,Max 42.0, -
AT VGS = 10V
6.60, 8.50
AT VGS = 5V ID = 15A
5.70, 7.40
AT VGS = 5V ID = 16A
5.70, 7.40
AT VGS = 5V ID = 16A
9.40, 12.2
AT VGS = 5V ID = 25A
8.50, 10.3
AT VGS = 5V ID = 16A
QGS [nC] Typ 26.0 2.30 1.80 1.80 2.60 2.20
QGD [nC] Typ 13.0 0.70 0.80 0.80 1.70 1.00
CISS [pF] Typ 6,738.0 841.0 644.0 644.0 1,097.0 1,180.0
COSS [pF] Typ 1,767.0 408.0 304.0 2.30 534.0 310.0
CRSS [pF] Typ 310.0 8.80 2.30 304.0 8.90 3.00
VSD [V] Typ,Max 0.77, 1.20 1.90, - 1.60, - 1.60, - 1.40, - 1.60, -
TRR [ns] Typ 45.0 0 0 0 0 0
QRR [nC] Typ 53.0 0 0 0 0 0
RG Internal [Ohm] Typ 1.20 0.40 0.40 0.40 0.50 0.40
RTHJC [°K/W] Max 0.45 1.00 1.00 1.00 0.50 1.00
RTHJA [°K/W] Max 42.0 64.0 64.0 64.0 53.0 66.0
ID [A] Typ 290.0
AT VGS = 10V TA = 25C
29.0
29.0
29.0
AT TA = 25C
60.0
29.0
AT TA = 25C
ID [A] Typ 277.0
AT VGS = 10V TA = 25C
-
-
-
-
-
ID(pulse) [A] Typ 1,564.0 161.0 125.0 125.0 215.0 164.0
PD [W] Typ 333.0
-
-
-
-
-
Figure of Merit
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
RDS(ON)*QG [mΩ*nC] Typ,Max -, - 20, 31 25, 44 25, 44 25, 44 28, 43
RDS(ON)*COSS [mΩ*pF] Typ,Max -, - 1224, 2203 1338, 2736 10, - 1442, 2884 1023, 1974
Calculated Values For Current & Power Rating
ID [A] Calc. @RTHJA max (Datasheet) TJ=150°C, TA=25°C 26.0 16.5 12.8 12.8 18.1 15.0
ID [A] Calc. @ RTHCA=°C/W TJ=150°C, TA=25°C 72.2 53.8 41.7 41.7 56.2 49.8
ID [A] Calc. @RTHJC max (Datasheet) TJ=150°C, TC=25°C 251.3 131.8 102.1 102.1 186.3 122.0
PD [W] Calc. @RTHJA max TJ=150°C, TA=25°C 2.98 1.95 1.95 1.95 2.36 1.89
PD [W] Calc. @ System RTHJA=5°C/W, TJ=150°C, TA=25°C 22.9 20.8 20.8 20.8 22.7 20.8
PD [W] Calc. @RTHJC max TJ=150°C, TC=25°C 277.8 125.0 125.0 125.0 250.0 125.0
Calculated Switching Turn-On and Turn-Off Times
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
td(on) [ns] Typ
9.61
0.79
0.60
0.60
1.15
1.11
tr [ns] Typ
5.31
0.45
0.51
0.51
1.15
0.64
td(off) [ns] Typ
9.07
1.65
1.27
1.27
1.97
2.32
tf [ns] Typ
5.10
0.75
0.86
0.86
1.67
1.07
Calculated Power Loss
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.42 0.033 0.029 0.029 0.047 0.043
RDS(ON) [mΩ] at TJ Typ 0
@82.7°C
3.3
@43.9°C
5.2
@52.3°C
5.2
@52.0°C
3.1
@46.4°C
3.6
@48.1°C
Calculated Conduction Loss [W] Typ
-
2.04
3.19
3.18
1.92
2.20
Calculated Switching Loss [W] Max
7.83
0.86
0.82
0.82
1.58
1.22
Diode Reverse Recovery Power Loss [W] 1 Typ
1.06
Output Capacitor Power Loss [W] Typ
0.35
0.082
0.061
0.0005
0.11
0.062
Calculated Total Power Loss [W] Typ
9.66
3.01
4.10
4.03
3.66
3.52
Estimated TJ at RTHCA=5°C/W [°C] Typ 82.7 43.9 52.3 52.0 46.4 48.1
Rated Junction Temperature [°C] Max 175.0 150.0 150.0 150.0 150.0 150.0

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual operating conditions.