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EPC Cross Reference

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Part Comparison Summary:
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Part Number DMT10H015LFG
(Diodes)		 EPC2052 X EPC2214 X EPC2252 X EPC2204 X EPC2306 X
Modify EPC Part
BVDSS [V] 100.0 100.0 80.0 80.0 100.0 100.0
RDS(ON) [mΩ] [Typ] 10.8 10.0 15.0 8.00 4.40 3.00
RTHJC [°K/W] 3.50 2.00 2.70 1.60 1.00 3.00
QG Typ [nC] 33.3 3.50 1.80 3.50 5.70 11.6
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.100 0.0053 0.0027 0.0053 0.0086 0.017
Package By Manufacturer PowerDI3333-8 BGA 1.5x1.5 BGA 1.35 x 1.35 BGA 1.5x1.5 LGA 2.5 x 1.5 QFN 3 x 5
Package Image
Package Area [mm2]
W=3.3mm, L=3.3mm
Area=10.9 mm2
W=1.50mm, L=1.50mm
Area=2.3 mm2
W=1.35mm, L=1.35mm
Area=1.8 mm2
W=1.50mm, L=1.50mm
Area=2.3 mm2
W=1.50mm, L=2.50mm
Area=3.8 mm2
W=3.00mm, L=5.00mm
Area=15.0 mm2
Calculated Total Power Loss [W]
1.42
0.51
0.53
0.47
0.55
0.75
Auto Qualified Yes No* Yes Yes No* No*
Status Promotion Preferred Active Preferred Preferred Preferred
Price/Performance ✔ Lowest Cost ✔ Best Performance
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Detail Power Loss Calculations:
Parameter Value Type DMT10H015LFG
(Diodes)		 EPC2052 EPC2214 EPC2252 EPC2204 EPC2306
Detail Parts Specifications
Click Here To See More Parameters >>
Package By Manufacturer PowerDI3333-8 BGA 1.5x1.5 BGA 1.35 x 1.35 BGA 1.5x1.5 LGA 2.5 x 1.5 QFN 3 x 5
Package Mounting SMD DIE DIE DIE DIE SMD
Material Silicon Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride
Configuration Single Single Single Single Single Single
Auto Qualified Yes No* Yes Yes No* No*
VGS [V] Max -20.0, 20.0 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00 -4.00, 6.00 -, -
BVDSS [V] Max 100 100 80 80 100 100
VTH [V] Min,Typ,Max 1.40, 2.00, 3.50 0.80, 1.40, 2.50 0.80, 1.40, 2.50 0.70, 1.20, 2.50 0.80, 1.10, 2.50 0.80, 1.30, 2.50
RDS(ON) [mΩ] Typ,Max 17.9, 23.5
AT VGS = 4.5V ID = 20A TJ = 25C 		10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C 		15.0, 20.0
AT VGS = 5V ID = 6A TJ = 25C 		8.00, 11.0
AT VGS = 5V ID = 11A TJ = 25C 		4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C 		3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
RDS(ON) [mΩ] Typ,Max 13.3, 18.0
AT VGS = 6V ID = 20A TJ = 25C 		10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C 		15.0, 20.0
AT VGS = 5V ID = 6A TJ = 25C 		8.00, 11.0
AT VGS = 5V ID = 11A TJ = 25C 		4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C 		3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
RDS(ON) [mΩ] Typ,Max 10.8, 13.5
AT VGS = 10V ID = 20A TJ = 25C 		10.0, 13.5
AT VGS = 5V ID = 11A TJ = 25C 		15.0, 20.0
AT VGS = 5V ID = 6A TJ = 25C 		8.00, 11.0
AT VGS = 5V ID = 11A TJ = 25C 		4.40, 6.00
AT VGS = 5V ID = 16A TJ = 25C 		3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
QG [nC] Typ,Max 33.3, -
AT VGS = 10V ID = 10A 		3.50, 4.50
AT VGS = 5V ID = 11A 		1.80, 2.20
AT VGS = 5V ID = 6A 		3.50, 4.30
AT VGS = 5V ID = 11A 		5.70, 7.40
AT VGS = 5V ID = 16A 		11.6, 16.3
AT VGS = 5V ID = 25A
QGS [nC] Typ 6.90 1.50 0.50 1.00 1.80 4.10
QGD [nC] Typ 5.10 0.50 0.30 0.50 0.80 0.80
CISS [pF] Typ 1,871.0 441.0 198.0 440.0 644.0 1,667.0
COSS [pF] Typ 261.0 195.0 129.0 1.30 304.0 482.0
CRSS [pF] Typ 6.90 3.20 1.80 190.0 2.30 3.60
VSD [V] Typ,Max 0.90, 1.30 2.00, - 1.90, - 1.50, - 1.60, - 1.60, -
TRR [ns] Typ 37.9 0 0 0 0 0
QRR [nC] Typ 51.9 0 0 0 0 0
RG Internal [Ohm] Typ 0.75 0.70 0.65 0.60 0.40 0.40
RTHJC [°K/W] Max 3.50 2.00 2.70 1.60 1.00 3.00
RTHJA [°K/W] Max 61.0 74.0 81.0 95.0 64.0 54.0
ID [A] Typ 10.0
AT VGS = 10V TA = 25C 		8.20
10.0
8.20
AT TA = 25C 		29.0
48.0
ID [A] Typ 8.00
AT VGS = 10V TA = 70C 		-
-
-
-
-
ID [A] Typ 42.0
AT VGS = 10V TA = 25C 		-
-
-
-
-
ID [A] Typ 26.0
AT VGS = 10V TC = 100C 		-
-
-
-
-
ID(pulse) [A] Typ 75.0 74.0 47.0 75.0 125.0 197.0
PD [W] Typ 35.0
AT TC = 25C 		-
-
-
-
-
PD [W] Typ 2.00
AT TA = 25C 		-
-
-
-
-
Figure of Merit
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
RDS(ON)*QG [mΩ*nC] Typ,Max 360, - 35, 61 27, 44 28, 47 25, 44 35, 62
RDS(ON)*COSS [mΩ*pF] Typ,Max 2819, - 1950, 3956 1935, 3880 10, - 1338, 2736 1446, 2124
Calculated Values For Current & Power Rating
ID [A] Calc. @RTHJA max (Datasheet) TJ=150°C, TA=25°C 8.71 7.91 6.21 7.73 12.8 17.5
ID [A] Calc. @ RTHCA=°C/W TJ=150°C, TA=25°C 14.0 14.5 11.7 16.2 22.3 26.7
ID [A] Calc. @RTHJC max (Datasheet) TJ=150°C, TC=25°C 36.4 48.1 34.0 59.6 102.1 74.0
PD [W] Calc. @RTHJA max TJ=150°C, TA=25°C 2.05 1.69 1.54 1.32 1.95 2.31
PD [W] Calc. @ System RTHJA=20°C/W, TJ=150°C, TA=25°C 5.32 5.68 5.51 5.79 5.95 5.43
PD [W] Calc. @RTHJC max TJ=150°C, TC=25°C 35.7 62.5 46.3 78.1 125.0 41.7
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Power Loss
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.100 0.0053 0.0027 0.0053 0.0086 0.017
RDS(ON) [mΩ] at TJ Typ 13
@58.4°C		 11
@36.1°C		 16
@37.1°C		 8.6
@35.0°C		 4.7
@36.5°C		 3.3
@42.2°C
Calculated Conduction Loss [W] Typ
0.32
0.27
0.39
0.21
0.12
0.082
Calculated Switching Loss [W] Max
0.12
0.035
0.019
0.029
0.042
0.080
Diode Reverse Recovery Power Loss [W] 1 Typ
0.7785
0
0
0
0
0
Output Capacitor Power Loss [W] Typ
0.098
0.20
0.12
0.23
0.38
0.57
Calculated Total Power Loss [W] Typ
1.42
0.51
0.53
0.47
0.55
0.75
Estimated TJ at RTHCA=20°C/W [°C] Typ 56.2 37.3 39.3 36.3 36.8 42.1
Rated Junction Temperature [°C] Max 150.0 150.0 150.0 150.0 150.0 150.0
Calculated Switching Turn-On and Turn-Off Times
Turn-on Delay Time, td(on) [ns] Typ
1.55
0.57
0.26
0.46
0.60
1.95
Rise Time, tr [ns] Typ
1.55
0.38
0.23
0.34
0.51
0.57
Turn-off Delay Time, td(off) [ns] Typ
4.04
0.65
0.29
0.79
1.27
2.72
Fall Time, tf [ns] Typ
3.00
0.42
0.25
0.49
0.86
0.72

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual operating conditions.