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EPC Cross Reference

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Part Comparison Summary:
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Part Number CSD19538Q2
(TI)		 EPC2203 X EPC2070 X EPC2051 X EPC2036 X EPC2306 X
Modify EPC Part
BVDSS [V] 100.0 80.0 100.0 100.0 100.0 100.0
RDS(ON) [mΩ] [Typ] 49.0 53.0 18.0 20.0 62.0 3.00
RTHJC [°K/W] 6.20 6.50 3.40 3.80 6.50 3.00
QG Typ [nC] 4.30 0.67 1.90 1.80 0.70 11.6
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.017 0.0010 0.0029 0.0027 0.0011 0.017
Package By Manufacturer SON2x2 BGA 0.9 x 0.9 BGA 0.85 x 1.3 BGA 0.85 x 1.3 BGA 0.9 x 0.9 QFN 3 x 5
Package Image
Package Area [mm2]
W=2mm, L=2mm
Area=4.0 mm2
W=0.90mm, L=0.90mm
Area=0.8 mm2
W=0.85mm, L=1.3mm
Area=1.1 mm2
W=0.85mm, L=1.30mm
Area=1.1 mm2
W=0.90mm, L=0.90mm
Area=0.8 mm2
W=3.00mm, L=5.00mm
Area=15.0 mm2
Calculated Total Power Loss [W]
1.92
0.31
0.17
0.20
0.33
0.64
Auto Qualified No Yes No No No No
Status Promotion Active Preferred Preferred Active Preferred
Price/Performance ✔ Lowest Cost ✔ Best Performance
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Detail Power Loss Calculations:
Parameter Value Type CSD19538Q2
(TI)		 EPC2203 EPC2070 EPC2051 EPC2036 EPC2306
Detail Parts Specifications
Click Here To See More Parameters >>
Package By Manufacturer SON2x2 BGA 0.9 x 0.9 BGA 0.85 x 1.3 BGA 0.85 x 1.3 BGA 0.9 x 0.9 QFN 3 x 5
Package Mounting SMD DIE DIE DIE DIE SMD
Material Silicon Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride Gallium Nitride
Configuration Single Single Single Single Single Single
Auto Qualified No Yes No No No No
VGS [V] Max -20.0, 20.0 -4.00, 5.75 -, - -4.00, 6.00 -4.00, 6.00 -, -
BVDSS [V] Max 100 80 100 100 100 100
VTH [V] Min,Typ,Max 2.80, 3.20, 3.80 0.80, 1.50, 2.50 0.80, 1.30, 2.50 0.80, 1.40, 2.50 0.80, 1.40, 2.50 0.80, 1.30, 2.50
RDS(ON) [mΩ] Typ,Max 49.0, 59.0
AT VGS = 10V ID = 5A TJ = 25C 		53.0, 80.0
AT VGS = 5V ID = 1A TJ = 25C 		18.0, 23.0
AT VGS = 5V ID = 3A TJ = 25C 		20.0, 25.0
AT VGS = 5V ID = 3A TJ = 25C 		62.0, 73.0
AT VGS = 5V ID = 1A TJ = 25C 		3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
RDS(ON) [mΩ] Typ,Max 58.0, 72.0
AT VGS = 6V ID = 5A TJ = 25C 		53.0, 80.0
AT VGS = 5V ID = 1A TJ = 25C 		18.0, 23.0
AT VGS = 5V ID = 3A TJ = 25C 		20.0, 25.0
AT VGS = 5V ID = 3A TJ = 25C 		62.0, 73.0
AT VGS = 5V ID = 1A TJ = 25C 		3.00, 3.80
AT VGS = 5V ID = 25A TJ = 25C
QG [nC] Typ,Max 4.30, 5.60
AT ID = 5A 		0.67, 0.83
AT VGS = 5V ID = 1A 		1.90, 2.50
AT VGS = 5V ID = 3A 		1.80, 2.30
AT VGS = 5V ID = 3A 		0.70, 0.91
AT VGS = 5V ID = 1A 		11.6, 16.3
AT VGS = 5V ID = 25A
QGS [nC] Typ 1.60 0.22 0.60 0.60 0.17 4.10
QGD [nC] Typ 0.80 0.12 0.20 0.30 0.14 0.80
CISS [pF] Typ 349.0 73.0 257.0 224.0 75.0 1,667.0
COSS [pF] Typ 69.0 47.0 82.0 86.0 50.0 482.0
CRSS [pF] Typ 12.6 0.50 0.50 1.00 0.70 3.60
VSD [V] Typ,Max 0.85, 1.00 2.20, - 1.60, - 1.90, - 1.90, - 1.60, -
TRR [ns] Typ 32.0 0 0 0 0 0
QRR [nC] Typ 94.0 0 0 0 0 0
RG Internal [Ohm] Typ 4.60 0.60 1.00 0.80 0.60 0.40
RTHJC [°K/W] Max 6.20 6.50 3.40 3.80 6.50 3.00
RTHJA [°K/W] Max 65.0 100.0 92.0 92.0 100.0 54.0
ID [A] Typ 4.60
1.70
1.70
AT TA = 25C 		1.70
1.70
AT TA = 25C 		48.0
ID [A] Typ 13.1
AT TC = 25C 		-
-
-
-
-
ID [A] Typ 14.4
-
-
-
-
-
ID(pulse) [A] Typ 34.4 17.0 34.0 37.0 18.0 197.0
PD [W] Typ 20.2
AT TC = 25C 		-
-
-
-
-
PD [W] Typ 2.50
-
-
-
-
-
Figure of Merit
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
RDS(ON)*QG [mΩ*nC] Typ,Max -, - 36, 66 34, 58 36, 58 43, 66 35, 62
RDS(ON)*COSS [mΩ*pF] Typ,Max 3381, 5310 2491, 5680 1476, 2829 1720, 3225 3100, 5475 1446, 2124
Calculated Values For Current & Power Rating
ID [A] Calc. @RTHJA max (Datasheet) TJ=150°C, TA=25°C 4.04 2.80 5.43 5.21 2.93 17.5
ID [A] Calc. @ RTHCA=°C/W TJ=150°C, TA=25°C 6.36 5.43 10.8 10.2 5.68 26.7
ID [A] Calc. @RTHJC max (Datasheet) TJ=150°C, TC=25°C 13.1 11.0 28.3 25.6 11.5 74.0
PD [W] Calc. @RTHJA max TJ=150°C, TA=25°C 1.92 1.25 1.36 1.36 1.25 2.31
PD [W] Calc. @ System RTHJA=20°C/W, TJ=150°C, TA=25°C 4.77 4.72 5.34 5.25 4.72 5.43
PD [W] Calc. @RTHJC max TJ=150°C, TC=25°C 20.2 19.2 36.8 32.9 19.2 41.7
FET Operating Conditions
Vbus[V]=, RgTotal=, ID[A]=, DC=, TA[C]=, fsw[kHz]=, RthCA[°C/W]=
   
Calculated Power Loss
Gate Drive [V] 10.0 5.00 5.00 5.00 5.00 5.00
Gate Drive Loss [W] 0.017 0.0010 0.0029 0.0027 0.0011 0.017
RDS(ON) [mΩ] at TJ Typ 65
@75.2°C		 56
@33.2°C		 16
@29.0°C		 19
@29.8°C		 61
@33.8°C		 3.3
@39.7°C
Calculated Conduction Loss [W] Typ
0.29
0.25
0.073
0.086
0.27
0.015
Calculated Switching Loss [W] Max
0.014
0.0034
0.0065
0.0084
0.0035
0.034
Diode Reverse Recovery Power Loss [W] 1 Typ
1.41
0
0
0
0
0
Output Capacitor Power Loss [W] Typ
0.18
0.054
0.090
0.11
0.059
0.57
Calculated Total Power Loss [W] Typ
1.92
0.31
0.17
0.20
0.33
0.64
Estimated TJ at RTHCA=20°C/W [°C] Typ 74.1 36.1 29.7 30.5 35.3 39.3
Rated Junction Temperature [°C] Max 150.0 150.0 150.0 150.0 150.0 150.0
Calculated Switching Turn-On and Turn-Off Times
Turn-on Delay Time, td(on) [ns] Typ
0.55
0.10
0.30
0.29
0.097
1.95
Rise Time, tr [ns] Typ
0.35
0.098
0.14
0.23
0.11
0.57
Turn-off Delay Time, td(off) [ns] Typ
0.42
0.098
0.42
0.33
0.11
2.72
Fall Time, tf [ns] Typ
0.29
0.094
0.18
0.25
0.12
0.72

1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual operating conditions.