EPC Cross Reference
The objective of this cross-reference tool is to help you find the best GaN FETs to fit your design needs.
Data is for reference only, for design support contact us via GaN Talk Support Forum EPC
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Data is for reference only, for design support contact us via GaN Talk Support Forum EPC
Back to the cross reference page
| Part Comparison Summary: | ||||||||||
| FET Operating Conditions | ||||||||||
| Part Number | AONR66922 (AOS) | EPC2092 X | EPC2052 X | EPC2214 X | EPC2252 X | EPC2306 X | ||||
| Modify EPC Part | ||||||||||
| BVDSS [V] | 100.0 | 100.0 | 100.0 | 80.0 | 80.0 | 100.0 | ||||
| RDS(ON) [mΩ] [Typ] | 7.40 | 2.80 | 10.0 | 15.0 | 8.00 | 3.00 | ||||
| RTHJC [°K/W] | 2.40 | 1.70 | 2.00 | 2.70 | 1.60 | 3.00 | ||||
| QG Typ [nC] | 32.5 | 12.0 | 3.50 | 1.80 | 3.50 | 11.6 | ||||
| Gate Drive [V] | 10.0 | 5.00 | 5.00 | 5.00 | 5.00 | 5.00 | ||||
| Gate Drive Loss [W] | 0.098 | 0.018 | 0.0053 | 0.0027 | 0.0053 | 0.017 | ||||
| Package By Manufacturer | DFN3.3x3.3-8L | BARE DIE 3.725X1.45 - 58 | BGA 1.5x1.5 | BGA 1.35 x 1.35 | BGA 1.5x1.5 | QFN 3 x 5 | ||||
| Package Image |  |
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| Package Area [mm2] |
W=3.3mm, L=3.3mm
Area=10.9 mm2 |
W=1.45mm, L=3.73mm
Area=5.4 mm2 |
W=1.50mm, L=1.50mm
Area=2.3 mm2 |
W=1.35mm, L=1.35mm
Area=1.8 mm2 |
W=1.50mm, L=1.50mm
Area=2.3 mm2 |
W=3.00mm, L=5.00mm
Area=15.0 mm2 |
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| Calculated Total Power Loss [W] | 3.57 |
0.93 |
0.70 |
0.82 |
0.63 |
0.83 |
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| Auto Qualified | No | No | No | Yes | Yes | No | ||||
| Status | Promotion | Preferred | Preferred | Active | Preferred | Preferred | ||||
| Price/Performance | ✔ Lowest Cost | ✔ Best Performance | ||||||||
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| Detail Power Loss Calculations: | ||||||||||
| Parameter | Value Type | AONR66922 (AOS) |
EPC2092 | EPC2052 | EPC2214 | EPC2252 | EPC2306 | |||
| Detail Parts Specifications | ||||||||||
| Click Here To See More Parameters >> | ||||||||||
| Package By Manufacturer | DFN3.3x3.3-8L | BARE DIE 3.725X1.45 - 58 | BGA 1.5x1.5 | BGA 1.35 x 1.35 | BGA 1.5x1.5 | QFN 3 x 5 | ||||
| Package Mounting | SMD | DIE | DIE | DIE | DIE | SMD | ||||
| Material | Silicon | Gallium Nitride | Gallium Nitride | Gallium Nitride | Gallium Nitride | Gallium Nitride | ||||
| Configuration | Single | Single | Single | Single | Single | Single | ||||
| Auto Qualified | No | No | No | Yes | Yes | No | ||||
| VGS [V] | Max | -20.0, 20.0 | -4.00, 6.00 | -4.00, 6.00 | -4.00, 6.00 | -4.00, 6.00 | -, - | |||
| BVDSS [V] | Max | 100 | 100 | 100 | 80 | 80 | 100 | |||
| VTH [V] | Min,Typ,Max | 1.50, 2.00, 2.50 | 0.80, 1.10, 2.50 | 0.80, 1.40, 2.50 | 0.80, 1.40, 2.50 | 0.70, 1.20, 2.50 | 0.80, 1.30, 2.50 | |||
| RDS(ON) [mΩ] | Typ,Max |
7.40, 9.00 AT VGS = 10V ID = 15A TJ = 25C |
2.80, 3.20 AT VGS = 5V ID = 30A TJ = 25C |
10.0, 13.5 AT VGS = 5V ID = 11A TJ = 25C |
15.0, 20.0 AT VGS = 5V ID = 6A TJ = 25C |
8.00, 11.0 AT VGS = 5V ID = 11A TJ = 25C |
3.00, 3.80 AT VGS = 5V ID = 25A TJ = 25C |
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| RDS(ON) [mΩ] | Typ,Max |
9.40, 12.0 AT VGS = 4.5V ID = 13A TJ = 25C |
2.80, 3.20 AT VGS = 5V ID = 30A TJ = 25C |
10.0, 13.5 AT VGS = 5V ID = 11A TJ = 25C |
15.0, 20.0 AT VGS = 5V ID = 6A TJ = 25C |
8.00, 11.0 AT VGS = 5V ID = 11A TJ = 25C |
3.00, 3.80 AT VGS = 5V ID = 25A TJ = 25C |
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| QG [nC] | Typ,Max | 15.0, - AT VGS = 4.5V ID = 15A |
-, - |
-, - |
-, - |
-, - |
-, - |
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| QG [nC] | Typ,Max | 32.5, 46.0 AT VGS = 10V ID = 15A |
12.0, 15.8 AT VGS = 5V ID = 30A |
3.50, 4.50 AT VGS = 5V ID = 11A |
1.80, 2.20 AT VGS = 5V ID = 6A |
3.50, 4.30 AT VGS = 5V ID = 11A |
11.6, 16.3 AT VGS = 5V ID = 25A |
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| QGS [nC] | Typ | 7.00 | 3.90 | 1.50 | 0.50 | 1.00 | 4.10 | |||
| QGD [nC] | Typ | 5.00 | 1.20 | 0.50 | 0.30 | 0.50 | 0.80 | |||
| CISS [pF] | Typ | 2,180.0 | 1,686.0 | 441.0 | 198.0 | 440.0 | 1,667.0 | |||
| COSS [pF] | Typ | 550.0 | 568.0 | 195.0 | 129.0 | 1.30 | 482.0 | |||
| CRSS [pF] | Typ | 13.0 | 4.30 | 3.20 | 1.80 | 190.0 | 3.60 | |||
| VSD [V] | Typ,Max | 0.72, 1.00 | 1.50, - | 2.00, - | 1.90, - | 1.50, - | 1.60, - | |||
| TRR [ns] | Typ | 32.0 | 0 | 0 | 0 | 0 | 0 | |||
| QRR [nC] | Typ | 138.0 | 0 | 0 | 0 | 0 | 0 | |||
| RG Internal [Ohm] | Typ | 1.10 | 0.90 | 0.70 | 0.65 | 0.60 | 0.40 | |||
| RTHJC [°K/W] | Max | 2.40 | 1.70 | 2.00 | 2.70 | 1.60 | 3.00 | |||
| RTHJA [°K/W] | Max | 60.0 | - | 74.0 | 81.0 | 95.0 | 54.0 | |||
| ID [A] | Typ |
50.0 AT TC = 25C |
69.0 |
8.20 |
10.0 |
8.20 AT TA = 25C |
48.0 |
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| ID [A] | Typ |
34.0 AT TC = 100C |
- |
- |
- |
- |
- |
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| ID [A] | Typ |
15.0 AT TA = 25C |
- |
- |
- |
- |
- |
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| ID [A] | Typ |
12.0 AT TA = 70C |
- |
- |
- |
- |
- |
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| ID(pulse) [A] | Typ | 150.0 | 218.0 | 74.0 | 47.0 | 75.0 | 197.0 | |||
| PD [W] | Typ |
52.0 AT TC = 25C |
- |
- |
- |
- |
- |
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| PD [W] | Typ |
20.5 AT TC = 100C |
- |
- |
- |
- |
- |
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| Figure of Merit | ||||||||||
| Gate Drive [V] | 10.0 | 5.00 | 5.00 | 5.00 | 5.00 | 5.00 | ||||
| RDS(ON)*QG [mΩ*nC] | Typ,Max | 241, 414 | 34, 51 | 35, 61 | 27, 44 | 28, 47 | 35, 62 | |||
| RDS(ON)*COSS [mΩ*pF] | Typ,Max | 4070, - | 1590, 2515 | 1950, 3956 | 1935, 3880 | 10, - | 1446, 2124 | |||
| Calculated Values For Current & Power Rating | ||||||||||
| ID [A] Calc. @RTHJA max (Datasheet) | TJ=150°C, TA=25°C | 10.8 | - | 7.91 | 6.21 | 7.73 | 17.5 | |||
| ID [A] Calc. @ RTHCA=°C/W | TJ=150°C, TA=25°C | 17.6 | 30.0 | 14.5 | 11.7 | 16.2 | 26.7 | |||
| ID [A] Calc. @RTHJC max (Datasheet) | TJ=150°C, TC=25°C | 53.8 | 107.2 | 48.1 | 34.0 | 59.6 | 74.0 | |||
| PD [W] Calc. @RTHJA max | TJ=150°C, TA=25°C | 2.08 | - | 1.69 | 1.54 | 1.32 | 2.31 | |||
| PD [W] Calc. @ System | RTHJA=20°C/W, TJ=150°C, TA=25°C | 5.58 | 5.76 | 5.68 | 5.51 | 5.79 | 5.43 | |||
| PD [W] Calc. @RTHJC max | TJ=150°C, TC=25°C | 52.1 | 73.5 | 62.5 | 46.3 | 78.1 | 41.7 | |||
| FET Operating Conditions | ||||||||||
| Calculated Power Loss | ||||||||||
| Gate Drive [V] | 10.0 | 5.00 | 5.00 | 5.00 | 5.00 | 5.00 | ||||
| Gate Drive Loss [W] | 0.098 | 0.018 | 0.0053 | 0.0027 | 0.0053 | 0.017 | ||||
| RDS(ON) [mΩ] at TJ | Typ | 14 @104.9°C |
3.7 @45.1°C |
11 @40.3°C |
17 @43.7°C |
8.8 @38.5°C |
3.4 @44.0°C |
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| Calculated Conduction Loss [W] | Typ | 0.57 |
0.15 |
0.45 |
0.68 |
0.36 |
0.14 |
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| Calculated Switching Loss [W] | Max | 0.16 |
0.10 |
0.045 |
0.024 |
0.038 |
0.10 |
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| Diode Reverse Recovery Power Loss [W] 1 | Typ | 2.07 |
0 |
0 |
0 |
0 |
0 |
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| Output Capacitor Power Loss [W] | Typ | 0.68 |
0.66 |
0.20 |
0.12 |
0.23 |
0.57 |
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| Calculated Total Power Loss [W] | Typ | 3.57 |
0.93 |
0.70 |
0.82 |
0.63 |
0.83 |
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| Estimated TJ at RTHCA=20°C/W [°C] | Typ | 98.2 | 44.3 | 42.3 | 46.7 | 40.3 | 44.0 | |||
| Rated Junction Temperature [°C] | Max | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | |||
| Calculated Switching Turn-On and Turn-Off Times | ||||||||||
| Turn-on Delay Time, td(on) [ns] | Typ | 1.81 |
1.58 |
0.57 |
0.26 |
0.46 |
1.95 |
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| Rise Time, tr [ns] | Typ | 1.52 |
0.77 |
0.38 |
0.23 |
0.34 |
0.57 |
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| Turn-off Delay Time, td(off) [ns] | Typ | 4.70 |
3.32 |
0.65 |
0.29 |
0.79 |
2.72 |
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| Fall Time, tf [ns] | Typ | 2.94 |
1.28 |
0.42 |
0.25 |
0.49 |
0.72 |
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1: Reverse Recovery losses are calculated from default datasheet conditions and these losses can be much higher in actual operating conditions.
